Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4118
Title: Improved effective channel length extraction method for 0.09-0.13 mm CMOS
Authors: Eng, Chee Wee
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2008
Source: Eng, C. W. (2008). Improved effective channel length extraction method for 0.09-0.13 mm CMOS. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: This work involves the detailed study and understanding of physical limits and shortcoming of existing electrical parameter extraction methodology i.e. effective channel length (Leff) extraction. This work not only improves and overcomes the limit of an existing Leff extraction method. In fact, an original and new method of Leff extraction has been developed through the discovery of new device physics for state-of-the-art metal-oxide-semiconductor field-effect-transistors (MOSFETs) with ultra-thin gate oxide (? 2 nm).
URI: https://hdl.handle.net/10356/4118
DOI: 10.32657/10356/4118
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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