Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4121
Title: Stress migration study of Cu/Low-k interconnect system
Authors: Lim, Yeow Kheng
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Issue Date: 2008
Source: Lim, Y. K. (2008). Stress migration study of Cu/Low-k interconnect system. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: This research focuses on the stress-induced voiding in Cu interconnects. The different types, and the process and geometrical dependency of stress-induced voiding are studied. In addition, in-depth understanding of stress-induced voiding mechanisms and process; approaches to improve stress migration reliability and, the extendibility and impacts of the approaches to future technologies, are discussed.
URI: https://hdl.handle.net/10356/4121
DOI: 10.32657/10356/4121
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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