Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4127
Title: Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
Authors: Chew, Kerlit.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2003
Abstract: One of the attractive properties of amorphous semiconductors is that their characteristics can be varied through changing their composition. As such, a wide variety of hydrogenated amorphous silicon alloys have been studied for their potential for various applications. In this respect, hydrogenated amorphous silicon carbide is the most promising.
URI: http://hdl.handle.net/10356/4127
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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