Please use this identifier to cite or link to this item:
Title: Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD
Authors: Chew, Kerlit.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2003
Abstract: One of the attractive properties of amorphous semiconductors is that their characteristics can be varied through changing their composition. As such, a wide variety of hydrogenated amorphous silicon alloys have been studied for their potential for various applications. In this respect, hydrogenated amorphous silicon carbide is the most promising.
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
2.59 MBAdobe PDFView/Open

Page view(s) 50

Updated on Jun 24, 2024


Updated on Jun 24, 2024

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.