Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/41399
Title: Development of statistical model for baseband MOSFETs
Authors: Lim, Guan Hui
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2008
Source: Lim, G. H. (2008). Development of statistical model for baseband MOSFETs. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: In this work, backward propagation of variance (BPV) methodology is used to develop a statistical MOSFET model for 0.35um technology to account for global process variations based on electrical data from measurements of MOSFET test structures in scribe line module (SLM) of production wafers. BPV, coupled with Pelgrom model for MOSFET mismatch, is also used to develop a statistical MOSFET mismatch model for 0.13um technology to account for local process variations such as random dopant fluctuation (RDF) in channel and line edgelline width roughness (LERILWR) of gate based on MOSFET test structures that were specially designed and fabricated on multi-project wafer (MPW) for this study. The statistical MOSFET models developed in this work enable the designer to perform Monte Carlo circuit simulation using circuit simulator such as HPSICE so that better and accurate assessment can be made on the potential circuit performance and functional yield of the circuit at the design stage. MOSFET mismatch test structures were also specially designed, fabricated and characterised for 0.1 8um, 0.1 3um, and 90nm technologies to study the impact of backend-of-line (BEOL) metals, multi-fingered MOSFET layout design and gate protection diode against plasma charging damage (PCD) on MOSFET mismatch characteristics.
URI: https://hdl.handle.net/10356/41399
DOI: 10.32657/10356/41399
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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