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|Title:||Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies||Authors:||Ong, Kuang Kian.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
|Issue Date:||2008||Source:||Ong, K. K. (2008). Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn into the development of post-implantation annealing techniques. Laser annealing (LA) has been shown to be a promising technique in the formation of ultra-shallow junction due to a number of its favorable features. LA has a near-zero thermal budget that is capable of producing a highly activated and abrupt ultra-shallow junction.||URI:||http://hdl.handle.net/10356/41418||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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