Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/41418
Title: Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies
Authors: Ong, Kuang Kian.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2008
Source: Ong, K. K. (2008). Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn into the development of post-implantation annealing techniques. Laser annealing (LA) has been shown to be a promising technique in the formation of ultra-shallow junction due to a number of its favorable features. LA has a near-zero thermal budget that is capable of producing a highly activated and abrupt ultra-shallow junction.
URI: http://hdl.handle.net/10356/41418
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
OngKuangKian08.pdf45.25 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.