Application of carbon nanotubes (CNTS) in copper/low k interconnects design
Loo, Shane Zhi Yuan
Date of Issue2008
School of Mechanical and Aerospace Engineering
With continuing device scaling from a 90nm to a 65nm node, wiring interconnect becomes increasingly crucial due to the effects on electrical resistance and wiring capacitance. The electrical resistance and parasitic capacitance associated with these metal interconnections has become a major factor that limits the circuit speed of such high performance IC's. This limitation is one of the motivating factor for microelectronics industry's move away from aluminium/silicon dioxide interconnects to Cu and low-k dielectrics material systems.
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics