Please use this identifier to cite or link to this item:
Title: Application of phase shift masking to sub-micron contact level lithography
Authors: Choo, Lay Cheng.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2000
Abstract: As device continues to shrink beyond the theoretical limit of the optical exposure tools, other options need to be considered. Resolution Enhancement Techniques (RET), such as Phase Shift Mask (PSM), Optical Proximity Correction (OPC) and / or Off Axis Illumination (OAI) will be required. Various types of PSM have been widely investigated by many lithographers. For contact hole masking, the Attenuated Phase Shift Mask (APSM) is the most feasible option due to the ease in mask fabrication. In addition, the APSM also allows random patterns to be printed.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
18.6 MBAdobe PDFView/Open

Page view(s) 50

Updated on Nov 28, 2020

Download(s) 10

Updated on Nov 28, 2020

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.