Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4158
Title: Application of phase shift masking to sub-micron contact level lithography
Authors: Choo, Lay Cheng.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2000
Abstract: As device continues to shrink beyond the theoretical limit of the optical exposure tools, other options need to be considered. Resolution Enhancement Techniques (RET), such as Phase Shift Mask (PSM), Optical Proximity Correction (OPC) and / or Off Axis Illumination (OAI) will be required. Various types of PSM have been widely investigated by many lithographers. For contact hole masking, the Attenuated Phase Shift Mask (APSM) is the most feasible option due to the ease in mask fabrication. In addition, the APSM also allows random patterns to be printed.
URI: http://hdl.handle.net/10356/4158
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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