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|Title:||Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing||Authors:||Chow, Fong Ling||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics||Issue Date:||2005||Source:||Chow, F. L. (2005). Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing. Master’s thesis, Nanyang Technological University, Singapore.||Abstract:||This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide.||URI:||https://hdl.handle.net/10356/4161||DOI:||10.32657/10356/4161||Rights:||Nanyang Technological University||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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