Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4161
Title: Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing
Authors: Chow, Fong Ling
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2005
Source: Chow, F. L. (2005). Formation of silicide films in advanced silicon devices using excimer pulsed laser annealing. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: This research project studies the formation of Co silicides by KrF excimer pulsed laser annealing for possible applications to Si technologies. Capping layer such as Ti and TiN, which acts as a protective layer, was used to study the optical coupling effect of laser-annealed Co silicide.
URI: https://hdl.handle.net/10356/4161
DOI: 10.32657/10356/4161
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
EEE-THESES_223.pdf13.89 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.