Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4163
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dc.contributor.authorChow, Jane Sze Mun.en_US
dc.date.accessioned2008-09-17T09:45:51Z-
dc.date.available2008-09-17T09:45:51Z-
dc.date.copyright2003en_US
dc.date.issued2003-
dc.identifier.urihttp://hdl.handle.net/10356/4163-
dc.description.abstractThe main purpose of this project is to study the latchup phenomenon in submicrometer CMOS devices and investigate the effects of spike annealing process on latchup sensitivity. Latchup characterization was carried out by a steady-state latchup triggering method.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits-
dc.titleLatchup characterization of submicrometer CMOSen_US
dc.typeThesisen_US
dc.contributor.supervisorZhang, Qingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Microelectronics)en_US
item.grantfulltextrestricted-
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