Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/41824
Title: Indium phosphide metamorphic heterojunction bipolar transistor technology
Authors: K Radhakrishnan
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2007
Abstract: Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many advantages such as high performance InP-based devices on low cost substrates such as GaAs, improved substrate mechanical strength (less brittle), control over alloy composition, and higher throughput leading to reduced production cost. Moreover, the availability of matured backside fabrication process in the case of GaAs substrates enables the possibility of production of high performance monolithic integrated circuits. Despite many desirable features, the InP-based metamorphic HBT technology is less mature and still in its infancy. Studies are limited, and only a few resear~h works have reported on the DC and RF performance of such devices. Many technical issues need to be addressed in terms of both growth and fabrication technologies before these devices can be considered for utilization in commercial systems. The primary objective of this research project is to improve the high frequency performance of InP-based MHBT devices fabricated on GaAs substrate. In this project, it is accomplished by reducing the emitter area successfully.
URI: http://hdl.handle.net/10356/41824
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

Files in This Item:
File Description SizeFormat 
KRadhakrishnan07.pdf
  Restricted Access
5.98 MBAdobe PDFView/Open

Page view(s) 50

392
Updated on Oct 24, 2021

Download(s)

4
Updated on Oct 24, 2021

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.