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|Title:||Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy||Authors:||Satrio Wicaksono.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Microelectronics||Issue Date:||2008||Source:||Satrio, W. (2008). Development and characterization of gallium arsenide-based antimony-containing dilute nitride grown by molecular beam epitaxy. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devices working at the optical communication window of 1.3-1.55um. The wavelength range is important due to the minimum laser attenuation windows in a silica optical fiber. However, the high cost of the incumbent InP-based optoelectronic devices has made optical network unfeasible compared to wireless/radio frequency networks, particularly for the "last mile" or fiber-to-premises applications. The emergence of dilute nitride compound semiconductors allows the growth of materials suitable for the 1.3um and 1.55um application on a cheaper and more robust GaAs substrate. In particular, the antimony-containing dilute nitride material system, GaAsSbN, has not been widely studied compared to GaNAs, GalnNAs, and GaInNAsSb. In this thesis, the growth of GaAsSbN lattice-matched to GaAs was conducted using a solid-source molecular beam epitaxy (SS-MBE) system in conjunction with a radio frequency (r.f.) plasma N source and Sb valved-cracker source. Studies on GaAsSb/GaNAs/GaAsSbN/GaAs structure revealed two important properties of GaAsSbN growth.||URI:||http://hdl.handle.net/10356/41841||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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