Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4196
Title: Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells
Authors: Dang, Yuxing
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2007
Source: Dang, Y. (2007). Intersubband transitions and anneal-induced interdiffusion effects in III-V-N quantum wells. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: III-V compounds consisting of nitrogen are candidates for interband transition applications because of their small band gap due to the nitrogen (N) incoporation. In addition, there is renewed interest in their possible applications in intersubband transition based devices owing to its large conduction band offset.
URI: https://hdl.handle.net/10356/4196
DOI: 10.32657/10356/4196
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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