Please use this identifier to cite or link to this item:
Title: Study of plasma etching of silicon carbide
Authors: Xia, Jinghua
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2010
Source: Xia, J. (2010). Study of plasma etching of silicon carbide. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Etching is a very crucial process in the fabrication of SiC microelectronic devices. Due to its exceptional chemical inertness, plasma etching is the only practical means of etching SiC. With more stringent requirements placed on the etch rate, etching profiles, surface quality for advanced SiC devices, it is of great importance to understand the mechanisms and behaviors of SiC plasma etching, including the physical damages involved and its consequences on the electrical characteristics of the devices. In this work, the etching behaviors of n type bulk 4H-SiC was studied using RIE and ECR etching processes, using halogen based chemicals, with/without added oxygen. The etch rate, surface roughness and contamination have been measured and analyzed. The etching of SiC based on the ECR plasma technique has been modeled using an artificial neural network based on an improved training algorithm. The modeling results were studied and physical interpretations were given. The plasma etching induced electrical damage was studied using Schottky barrier diodes as test devices. The objective of this project is to develop an optimum plasma etching process for the fabrication of SiC power devices, with precise etching control and minimum induced damage.
DOI: 10.32657/10356/42362
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
PhDThesis_Xia Jinghua_PDF.pdf4.27 MBAdobe PDFThumbnail

Page view(s)

Updated on Nov 24, 2020


Updated on Nov 24, 2020

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.