Parylene as a dielectric layer in a field effect transistor (FET)

Abstract

The objective of this project is to develop the parylene coating system for transistor dielectric application in Crystal Growth Lab. This will include the optimization of parameters so that good quality parylene films can be deposited. Experiments will be conducted to determine the relationship between the mass of precursor parylene and thickness of film deposited. Electrical properties of the dielectric film were determined through capacitance and transistor measurement while physical properties such as surface roughness of parylene film were investigated using the Atomic Force Microscopy (AFM). Finally, the dielectric parylene film has been successfully used as a good dielectric layer through good performance observed from Field Effect Transistors (FETs) fabricated from single crystals of Rubrene and CuPc.