Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4273
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dc.contributor.authorGao, Xiao Fangen_US
dc.date.accessioned2008-09-17T09:48:08Z
dc.date.available2008-09-17T09:48:08Z
dc.date.copyright2001en_US
dc.date.issued2001
dc.identifier.urihttp://hdl.handle.net/10356/4273
dc.description.abstractThis report is about the Silicon-on-insulator (SOI) technology.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors
dc.titleFabrication of partial SOI power structuresen_US
dc.typeThesisen_US
dc.contributor.supervisorTan, Cher Mingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Engineeringen_US
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