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https://hdl.handle.net/10356/4273
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gao, Xiao Fang | en_US |
dc.date.accessioned | 2008-09-17T09:48:08Z | |
dc.date.available | 2008-09-17T09:48:08Z | |
dc.date.copyright | 2001 | en_US |
dc.date.issued | 2001 | |
dc.identifier.uri | http://hdl.handle.net/10356/4273 | |
dc.description.abstract | This report is about the Silicon-on-insulator (SOI) technology. | en_US |
dc.rights | Nanyang Technological University | en_US |
dc.subject | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | |
dc.title | Fabrication of partial SOI power structures | en_US |
dc.type | Thesis | en_US |
dc.contributor.supervisor | Tan, Cher Ming | en_US |
dc.contributor.school | School of Electrical and Electronic Engineering | en_US |
dc.description.degree | Master of Engineering | en_US |
item.grantfulltext | restricted | - |
item.fulltext | With Fulltext | - |
Appears in Collections: | EEE Theses |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
EEE-THESES_324.pdf Restricted Access | 2.19 MB | Adobe PDF | View/Open |
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