Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4282
Title: Fabrication of InGaP high electron mobility transistors by electron beam technique
Authors: Gay, Boon Ping.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 1999
Abstract: Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does not appear to exhibit problems with donor-related deep traps, which can cause instabilities in the threshold voltage and transconductance of the transistor. In addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier recombination velocity, and can be selectively wet etched in HCl-based solutions. Therefore, this thesis presents the device fabrication and characterisation of the InxGai.xP/In0.2oGao.8oAs HEMT.
URI: http://hdl.handle.net/10356/4282
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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