Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/42870
Title: All-solution processable top-gate organic field effect transistor
Authors: Gao, Ying.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2011
Abstract: An organic field-effect transistor (OFET) is a field effect transistor using organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate. These devices can be developed to realize low-cost, large-area electronic products. OFETs have been fabricated with various device geometries. The most commonly used device geometry is bottom gate with top drain- and source electrodes, because this geometry is similar to the thin-film silicon transistor (TFT) using thermally grown Si/SiO2 oxide as gate dielectric. Organic polymers, such as poly (methyl-methacrylate) (PMMA), can be used as dielectric, too.
URI: http://hdl.handle.net/10356/42870
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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