dc.contributor.authorTan, Khing Hong
dc.date.accessioned2011-02-17T07:52:40Z
dc.date.accessioned2017-07-23T08:33:22Z
dc.date.available2011-02-17T07:52:40Z
dc.date.available2017-07-23T08:33:22Z
dc.date.copyright2010en_US
dc.date.issued2010
dc.identifier.citationTan, K. H. (2010). Theoretical and experimental study of semiconducting iron disilicide and its applications to thin film solar cells. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/42899
dc.description.abstractTransition metal silicides have been studied extensively for many years due to their potential technological importance and applications. Recently, the semiconducting phase of iron disilicide (β-FeSi2) has received considerable attention due to its potential applications in optoelectronic and microelectronic areas. This is attributed to its direct bandgap of 0.86 eV that corresponds to ~1.5 µm of the optical fiber communication. In addition, β-FeSi2 is expected as a promising photovoltaic material with a theoretical conversion efficiency as high as 23% due to its ultrahigh optical absorption coefficient in the order of 105 cm-1 near the absorption edge. These properties, along with other features such as abundance of constituent elements, nearly lattice-matched to Si, and high thermal stability and oxidation resistance, have made β-FeSi2 one of the most attractive materials of choice for future generation thin film photovoltaic applications. In this work, both theoretical and experimental study of β-FeSi2 was explored. The theoretical study based on the first-principles calculations provides the fundamental understanding of various properties of β-FeSi2, including equilibrium crystal structure, bandgap properties, effects of native vacancy defects, and impurity doping in β-FeSi2. The experimental study involves the formation and structural, optical, and electrical characterization of sputtered and processed β-FeSi2 as well as eventual demonstration of semiconducting β-FeSi2-based heterojunction thin film solar cells on the Si platform.en_US
dc.format.extent213 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleTheoretical and experimental study of semiconducting iron disilicide and its applications to thin film solar cellsen_US
dc.typeThesis
dc.contributor.researchMicroelectronics Centreen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorPey Kin Leongen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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