Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4294
Title: Determination of carrier lifetime in power semiconductor devices
Authors: Goh, Chee Hiong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2003
Abstract: In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importance of considering a non-uniform lifetime profile is to suit the new fabrication techniques.
URI: http://hdl.handle.net/10356/4294
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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