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Title: Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects
Authors: Fu, Chunmiao
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Issue Date: 2011
Source: Fu, C. (2011). Study on the effectiveness of reservoir length in improving electromigration in Cu/Low-k interconnects. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: Electromigration (EM) occurs in the form of void formation because of mass transport, reducing the electrical reliability of interconnects. The aggressive shrinkage of interconnects while maintaining at high current capability and reliability emerges EM to be a serious reliability issue, especially with the introduction of Cu and low-k dielectric material in the backend integrated circuits. Reservoir region can contribute better EM reliability of interconnects. However, the effectiveness of the reservoir effect in improving EM reliability as a function of line width has not been studied. In this work, experimental studies on the reservoir effect of EM reliability are performed for the Cu/low-k dual-damascene interconnects with varied reservoir lengths in both narrow and wide metal lines. Finite element simulation is applied to assist us in understanding the mechanism of reservoir effect effectiveness.
DOI: 10.32657/10356/43533
Schools: School of Electrical and Electronic Engineering 
Research Centres: Centre for Integrated Circuits and Systems 
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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