Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/43583
Title: Oxide semiconductor nanowires and si-based nanomaterials : synthesis and properties
Authors: Zhang, Zhou
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2011
Source: Zhang, Z. (2011). Oxide semiconductor nanowires and si-based nanomaterials : synthesis and properties. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The main objective of this dissertation is to extend the understanding of nanofabrication mechanisms and achieve controlled synthesis of functional nanomaterials with predesigned morphologies and properties, which are potential candidates of building blocks for future nanodevices and nanomachines. Thanks to the fast growth of material characterization techniques, especially the developments of non-optical microscopes (such as scanning tunneling microscope, atomic force microscope, electron microscope, etc.), lots of interests have been drawn to nanomaterials in the recent decades. Aside from their intrinsic advantage of small size which warrants non-replaceable applications in specific areas, nanomaterials also possess many outstanding physical and chemical properties compare to the bulk and film counterparts. However, industrial applications of nanomaterials are still limited due to the lack of knowledge in nanoscale dynamics, nanofabrication techniques, etc. Thus systematic studies are motivated to achieve reliable methods of nanomaterial synthesis with high quality and prominent properties. In this dissertation, we studied the fabrication of several metal oxide and silicide nanomaterials (in particular, ZnO, SnO2, MgO, Cu3Si, and Mg2SiO4), using a simple method of vapor transport.
URI: https://hdl.handle.net/10356/43583
DOI: 10.32657/10356/43583
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Theses

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