Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4363
Title: Investigation and analysis of 1/f noise in sub-micron NMOS devices
Authors: Hla Myo.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2004
Abstract: This thesis develops a systematic framework for the flicker noise measurement, characterization and simulation of deep sub-micron MOSFETs. In particular, the low frequency noise in 0.13 micrometer NMOS devices is investigated. The devices used throughout this project have been fabricated according to the triple well 0.13 micrometer CMOS technology with different doses of phosphorous: 1x10e13/cm2, 2x10e13/cm2 and 3x10e13/cm2 in Deep-Nwell (secondary body).
URI: http://hdl.handle.net/10356/4363
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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