Please use this identifier to cite or link to this item:
Title: Investigation and analysis of 1/f noise in sub-micron NMOS devices
Authors: Hla Myo.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2004
Abstract: This thesis develops a systematic framework for the flicker noise measurement, characterization and simulation of deep sub-micron MOSFETs. In particular, the low frequency noise in 0.13 micrometer NMOS devices is investigated. The devices used throughout this project have been fabricated according to the triple well 0.13 micrometer CMOS technology with different doses of phosphorous: 1x10e13/cm2, 2x10e13/cm2 and 3x10e13/cm2 in Deep-Nwell (secondary body).
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
16.61 MBAdobe PDFView/Open

Page view(s)

Updated on May 24, 2024


Updated on May 24, 2024

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.