Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/4374
Title: | CMOS curvature-corrected voltage reference | Authors: | Hon, Yau Kin. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
Issue Date: | 2000 | Abstract: | A low voltage curvature-correction band-gap voltage reference is designed and fabricated using IME's 0.8um standard CMOS process. A first-order and a curvature voltage source are used to compensate the base emitter voltage, which has a negative temperature coefficient. It provides an accurate 1.25 V output voltage over a power supply range from 2.4 V to 3.6V. Such a design is suitable for two-battery portable applications. The whole design is divided into several functional blocks and each block is layed out separately in a standard height manner so that each functional block could be reused easily in other designs. Most of the functional blocks have been characterized, and closely matched the simulation results. | URI: | http://hdl.handle.net/10356/4374 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Theses |
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File | Description | Size | Format | |
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EEE-THESES_414.pdf Restricted Access | 6.38 MB | Adobe PDF | View/Open |
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