Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4399
Title: Characteristics of chemical mechanical polishing in advanced wafer processing
Authors: Huang, Wen Ke.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2003
Abstract: Chemical Mechanical Polishing (CMP) is the only option for achieving local and global planarization to meet the requirement of photolithography to build multi-level interconnection layers. It is the best planarization method because of its ability to get longer length scales than traditional planar techniques.
URI: http://hdl.handle.net/10356/4399
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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