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|Title:||Scanning capacitance microscopy and related technologies for semiconductor device characterizations||Authors:||Jiang, Yaoyao||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2004||Abstract:||This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profile of semiconductor device.||URI:||http://hdl.handle.net/10356/4447||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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