Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4447
Title: Scanning capacitance microscopy and related technologies for semiconductor device characterizations
Authors: Jiang, Yaoyao
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2004
Abstract: This work reports on applying scanning capacitance microscopy (SCM), one relatively new technology to silicon device characterization. As an extension of scanning probe microscopy (SPM), scanning capacitance microscopy (SCM) has the unique ability to map high-resolution two-dimensional dopant profile of semiconductor device.
URI: http://hdl.handle.net/10356/4447
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
EEE-THESES_480.pdf
  Restricted Access
12.52 MBAdobe PDFView/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.