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|Title:||Compact modeling of non-classical MOSFETs for circuit simulation||Authors:||Zhu, Guojun.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2011||Abstract:||This thesis documents the compact models developed for SOI/FinFET/SiNW MOSFETs as well as Schottky barrier and dopant-segregated Schottky MOSFETs. The Unified Regional Modeling approach is extended from bulk MOSFETs to SOI MOSFETs as well as the next generation FinFET/SiNW MOSFETs. SOI-specific effects, such as floating-body and self-heating effects, are physically modeled using both analytical and subcircuit approaches. The limitations of unipolar assumption are explored through TCAD simulation and a novel symmetrical imref correction is proposed to effectively remedy the unipolar assumption. A unified model for FinFET/SiNW MOSFETs is formulated. The Gummel symmetry issue in three terminal devices is essentially solved by the proposed effective drain-source voltage expression. The unified model is validated extensively with experiment data and has been coded in Verilog A for statistical and technology variation studies. A physicsbased single piece compact model for undoped Schottky barrier SiNW MOSFETs is formulated based on a quasi-2D surface potential solution and Miller-Good tunneling model. Unique ambipolar behavior is excellently reproduced. A unique subcircuit approach is proposed to physically model the dopant-segregation in Schottky SiNW MOSFETs. The model can not only reproduce the unique convex curvature in Ids-Vds characteristics, but also explain the process variations in particular the Schottky barrier height variations. The research demonstrated the unique advantage of the Unified Regional Modeling approach in modeling the next generation non-classical MOS devices.||URI:||http://hdl.handle.net/10356/44550||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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