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|Title:||Development of silicon carbide thin films for optoelectronic device applications||Authors:||Ji, Rong||Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
|Issue Date:||1996||Abstract:||In this project, the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique has been used to deposit amorphous (a-SiC:H) and microcrystalline (mc-SiC3-I) films for characterisation of their optical, electrical and structural properties using transmittance/reflectance measurements, variable-temperature current-voltage (I-V) characterisation, Raman scattering and Fourier transform IR spectroscopy.||URI:||http://hdl.handle.net/10356/4461||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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