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|Title:||Ni-alloy silicides for advanced Si technologies||Authors:||Chaw, Joanna Yane Yin.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2004||Abstract:||This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation technology for the integration into future complementary metal-oxide-semiconductor (CMOS) devices. In the self-aligned silicidation process, metal silicide is formed not only on the single crystalline source/drain regions for contact metallization, but also on the polycrystalline gate electrode to reduce the polysilicon (poly-Si) line resistance. Hence, experiments were carried out to study the phase transformation and thermal stability of Ni- and Ni(5 and 10 at.% Pt)-silicides on both single crystalline and polycrystalline samples which include Si(100), SiGe(lOO), SiGeC(lOO), poly-Si and poly-SiGe.||URI:||http://hdl.handle.net/10356/4464||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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