Please use this identifier to cite or link to this item:
Title: Ni-alloy silicides for advanced Si technologies
Authors: Chaw, Joanna Yane Yin.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2004
Abstract: This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation technology for the integration into future complementary metal-oxide-semiconductor (CMOS) devices. In the self-aligned silicidation process, metal silicide is formed not only on the single crystalline source/drain regions for contact metallization, but also on the polycrystalline gate electrode to reduce the polysilicon (poly-Si) line resistance. Hence, experiments were carried out to study the phase transformation and thermal stability of Ni- and Ni(5 and 10 at.% Pt)-silicides on both single crystalline and polycrystalline samples which include Si(100), SiGe(lOO), SiGeC(lOO), poly-Si and poly-SiGe.
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
21.24 MBAdobe PDFView/Open

Page view(s) 50

Updated on Jun 14, 2024


Updated on Jun 14, 2024

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.