Please use this identifier to cite or link to this item:
|Title:||Silicon nanowire characterization for fatigue and reliability||Authors:||Yim, Wai Tat.||Keywords:||DRNTU::Engineering::Materials::Material testing and characterization||Issue Date:||2011||Abstract:||This final year project report mainly focus on a project that is in conjunction with A*STAR Institute of Microelectronics in performing a study on the silicon nanowire characterization for fatigue and reliability. The project encompass a background research on relevant mechanical and reliability experimental methods for MEMS pressure sensors. The preparation of the experiment samples and most importantly the series of experimental setups that are vitally essential. Also not forgetting to the series of characterization experiments conducted to evaluate the reliability of the pressure sensors. The pressure sensor samples fabricated were embedded with P-type silicon nanowire and <110> oriented. The nanowires were fabricated by employing complementary metal oxide semiconductor (CMOS) compatible process. A series of characterization experiments namely bulge testing, fracture and fatigue testing were conducted in A*STAR Institute of Microelectronics and significant results were obtained. However due to time constraints, improvements to the experiments had been proposed to further facilitate the near future works.||URI:||http://hdl.handle.net/10356/44973||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MAE Student Reports (FYP/IA/PA/PI)|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.