Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/45004
Title: Characterization and fabrication of InGaN/GaN MQWs and LEDs on macroporous Si substrate
Authors: Dang, Dominic Thor Weng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2011
Abstract: Growth of indium gallium nitrite (InGaN)/gallium nitride (GaN) multiple quantum well (MQW) on porous silicon (Si) and porous GaN on sapphire had been studied. Electrochemical etching was carried out to produce the porous surfaces. Effects of current, temperature, illumination and durations on electrochemical etching were investigated. Material properties and performance of light emitting diodes (LEDs) grown on porous Si and conventional substrates were compared. Characterizations results from scanning electron microscope (SEM), transmission electron microscope (TEM), reciprocal space map (RSM) and micro-photoluminescence (micro-PL) shows that MQW grown on porous Si were less stressed. Significant improvement of 6-8 times was observed on the PL intensity of MQW grown on porous Si.
URI: http://hdl.handle.net/10356/45004
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
eB6085-101.pdf
  Restricted Access
9.58 MBAdobe PDFView/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.