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|Title:||Study and characterization of low dielectric constant materials for interlayer dielectric applications||Authors:||Narayanan, Babu||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2003||Abstract:||The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures form 200 to 400C. the influence of deposition temperature on the films were characterized using Fourier transform infrared spectroscopy (FTIR) to understand its impact on the studied properties.||URI:||http://hdl.handle.net/10356/4535||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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