Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4535
Title: Study and characterization of low dielectric constant materials for interlayer dielectric applications
Authors: Narayanan, Babu
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2003
Abstract: The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures form 200 to 400C. the influence of deposition temperature on the films were characterized using Fourier transform infrared spectroscopy (FTIR) to understand its impact on the studied properties.
URI: http://hdl.handle.net/10356/4535
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
EEE-THESES_56.pdf
  Restricted Access
2.92 MBAdobe PDFView/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.