Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/45581
Title: Characterization and reliability study of non-volatile memory devices
Authors: Tang, Zen Hwai.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::integrated circuits
Issue Date: 2011
Abstract: Flash memory devices are very important and are widely used in our daily life. With the continuous scaling of memory devices dimension, it is expected that the memory will not fulfill the requirement set by the International Technology Roadmap of Semiconductor (ITRS).
URI: http://hdl.handle.net/10356/45581
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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