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Title: 0.13-micron CMOS device characterization
Authors: Lazuardi, Stephen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2002
Abstract: This project emphasizes more on the transistor electrical characterization aspect as the input Front End of Line parameters are varied. This report covers the characterization of a fully working 0.13 um device with three layer metal copper Dual Damascene backend process.
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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