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Title: Studying the self-heating effect in silicon-on-insulator transistors
Authors: Lee, Kah Wai.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2011
Abstract: Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is presented to characterize the self-heating effects.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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