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https://hdl.handle.net/10356/45717
Title: | Studying the self-heating effect in silicon-on-insulator transistors | Authors: | Lee, Kah Wai. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics | Issue Date: | 2011 | Abstract: | Self-heating effect is an important issue for SOI CMOS. This is because there is a buried oxide layer under the channel region. So, this layer will act as barrier to heat flow as the thermal conductivity of the SiO2 is larger than of Si.Hence, a channel temperature extraction technique by in-situ is presented to characterize the self-heating effects. | URI: | http://hdl.handle.net/10356/45717 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Student Reports (FYP/IA/PA/PI) |
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EA6001-101.pdf Restricted Access | 1.4 MB | Adobe PDF | View/Open |
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