Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4572
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dc.contributor.authorLee, Hiong Wengen
dc.date.accessioned2008-09-17T09:54:32Zen
dc.date.available2008-09-17T09:54:32Zen
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationLee, H. W. (2005). Low temperature growth of ZnO thin films by filtered cathodic vacuum arc technique. Master’s thesis, Nanyang Technological University, Singapore.en
dc.identifier.urihttps://hdl.handle.net/10356/4572en
dc.description.abstractA detailed study of zinc oxide films prepared by filtered cathodic vacuum arc technique was carried out, with an emphasis on the application of ZnO as transparent conductive oxide, as well as the fabrication of a ZnO-based transparent thin film transistor.en
dc.rightsNanyang Technological Universityen
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materialsen
dc.titleLow temperature growth of ZnO thin films by filtered cathodic vacuum arc techniqueen
dc.typeThesisen
dc.contributor.supervisorLau Shu Ping, Danielen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.degreeMASTER OF ENGINEERING (EEE)en
dc.identifier.doi10.32657/10356/4572en
item.grantfulltextopen-
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Appears in Collections:EEE Theses
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