Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4595
Title: Calibration methodology for predictive simulation of sub-0.13 technology CMOS device's performance
Authors: Leong, Vincent Kum Woh.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2004
Abstract: This report describes a calibration methodology for predictive simulation of sub-0.13 pm technology CMOS device’s performance. It provides an introduction to TCAD simulators (TSUPREM4 and MEDICI) and reviews the physical models and parameters that are implemented in this calibration methodology. These include models and parameters for process simulation in Ion Implantation, Diffusion of Impurities, Activation of Impurities, Polycrystalline Materials Modeling and Quantum Mechanical Modeling. Models for device simulation are Shockley-Read- Hall and Auger Recombination, Lombardi Surface Mobility, Parallel Field Mobility and Modified Local Density Approximation Quantum Effect. Preparation procedures in Process Flow, Recipes, Physical Device Structures, Implantation Profiles and Grid Setting are also highlighted in order to construct reliable simulation decks.
URI: http://hdl.handle.net/10356/4595
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
EEE-THESES_613.pdf
  Restricted Access
28.11 MBAdobe PDFView/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.