Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4596
Title: Characterization of ultrathin gate dielectric films
Authors: Leong, Li Ying.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2003
Abstract: This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and edge regions.
URI: http://hdl.handle.net/10356/4596
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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