Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4596
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dc.contributor.authorLeong, Li Ying.en_US
dc.date.accessioned2008-09-17T09:55:01Z-
dc.date.available2008-09-17T09:55:01Z-
dc.date.copyright2003en_US
dc.date.issued2003-
dc.identifier.urihttp://hdl.handle.net/10356/4596-
dc.description.abstractThis study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and edge regions.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials-
dc.titleCharacterization of ultrathin gate dielectric filmsen_US
dc.typeThesisen_US
dc.contributor.supervisorChen, Tupeien_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Microelectronics)en_US
item.grantfulltextrestricted-
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