Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4600
Title: A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
Authors: Lew, Kim Luong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2004
Abstract: Power amplifiers are critical components in wireless communication systems. The devices chosen for this application must offer improved microwave efficiency, linearity, power handling capacility and potentially manufacturable at low cost. Two devices were systematically studied in this thesis.
URI: http://hdl.handle.net/10356/4600
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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