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|Title:||Copper metallization for deep submicron integrated circuits||Authors:||Li, Chao Yong.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials||Issue Date:||2003||Abstract:||Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated.||URI:||http://hdl.handle.net/10356/4616||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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