Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4616
Title: Copper metallization for deep submicron integrated circuits
Authors: Li, Chao Yong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Issue Date: 2003
Abstract: Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated.
URI: http://hdl.handle.net/10356/4616
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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