dc.contributor.authorLi, Huien_US
dc.date.accessioned2008-09-17T09:55:37Z
dc.date.accessioned2017-07-23T08:31:54Z
dc.date.available2008-09-17T09:55:37Z
dc.date.available2017-07-23T08:31:54Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationLi, H. (2006). GaAs/AlGaAs (111)A-based and InGaAsP based quantum well infrared photodetectors. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/4630
dc.description.abstractIn this thesis, a (111) A-oriented GaAs/AlGaAs QWIP and an InGaAsP/InGaAsP/InGaAs step QWIP on InP substrate have been investigated.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
dc.titleGaAs/AlGaAs (111)A-based and InGaAsP based quantum well infrared photodetectorsen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorMei Ting (EEE)en_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


Files in this item

FilesSizeFormatView
EEE-THESES_645.pdf6.595Mbapplication/pdfView/Open

This item appears in the following Collection(s)

Show simple item record