dc.contributor.authorLi, Jingqien_US
dc.date.accessioned2008-09-17T09:55:49Z
dc.date.accessioned2017-07-23T08:31:55Z
dc.date.available2008-09-17T09:55:49Z
dc.date.available2017-07-23T08:31:55Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationLi, J. (2006). Carbon nanotube based field effect transistors. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/4641
dc.description.abstractCarbon nanotube based field effect transistors (CNTFETs) were fabricated by placing carbon nanotubes across source and drain electrodes using AC dielectrophoresis technique. The characteristics of the CNTFETs and their relevant phenomena have been studied in this project. Some simulation works about the performance of the CNTFETs have been done.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
dc.titleCarbon nanotube based field effect transistorsen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorZhang Qing (EEE)en_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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