Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/46437
Title: Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers
Authors: Xu, Dawei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2011
Source: Xu, D. (2011). Thermal effects in 1.3-μm InAs/GaAs quantum-dot vertical-cavity surface-emitting lasers. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The goal of this project is to analyze and characterize the influence of self-heating on the output performance in 1.3-μm GaAs/InAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) and to realize improvement and optimization in device fabrication. This research work includes both theoretical (modeling) and experimental (device processing) approaches. In theoretical study, a self-consistent model comprised of rate equations and the thermal conduction equation was established to analyze the influence of self-heating on the carrier occupation, the quantum efficiency and the output power of 1.3-μm QD VCSELs. The devices with both single- and multi-mode emission were fabricated and characterized. The influence of self-heating was characterized based on the combination of theoretical and experimental investigations. The dielectric-free approach and the surface-relief technique were adopted to improve output power and the fundamental-mode emission, respectively. These were both realized in the QD VCSEL for the first time.
URI: https://hdl.handle.net/10356/46437
DOI: 10.32657/10356/46437
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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