Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4647
Title: Low temperature polycrystalline silicon thin films and thin film transistors
Authors: Li, Junfeng
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2006
Source: Li, J. (2006). Low temperature polycrystalline silicon thin films and thin film transistors. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Low temperature polycrystalline silicon (LTPS) and LTPS thin film transistors (TFTs) have attracted great attention in recent years, with promising applications in flat panel displays as pixel addressing devices and circuit constructing components. High-quality LTPS films are necessary to achieve better device performance. Thermal crystallization techniques, including solid phase crystallization (SPC) and metal induced lateral crystallization (MILC) using nickel (Ni), are studied in this thesis.
URI: https://hdl.handle.net/10356/4647
DOI: 10.32657/10356/4647
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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