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|Title:||Development of photolithography for the fabrication of novel GaAs based devices and diamond-like film based devices||Authors:||Prasad Krishnamachar.||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||1998||Abstract:||In this project report, we have outlined the details of a successful development of photolithography processes for the fabrication of GaAs based devices. The processes require the need for reliable and repeatable way, in which the design patterns are transferred from the mask plate onto the semiconductor wafer. Typical devices fabricated in our laboratory, using this lithography process, include GaAs metal-semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs), and heterojunction bipolar transistors (HBTs).||Description:||58 p.||URI:||http://hdl.handle.net/10356/46592||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Research Reports (Staff & Graduate Students)|
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