Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/46592
Title: Development of photolithography for the fabrication of novel GaAs based devices and diamond-like film based devices
Authors: Prasad Krishnamachar.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 1998
Abstract: In this project report, we have outlined the details of a successful development of photolithography processes for the fabrication of GaAs based devices. The processes require the need for reliable and repeatable way, in which the design patterns are transferred from the mask plate onto the semiconductor wafer. Typical devices fabricated in our laboratory, using this lithography process, include GaAs metal-semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs), and heterojunction bipolar transistors (HBTs).
Description: 58 p.
URI: http://hdl.handle.net/10356/46592
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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