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https://hdl.handle.net/10356/46615| Title: | Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications | Authors: | Zhu, Wei Guang. | Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors | Issue Date: | 1995 | Abstract: | Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access memory (DRAM) applications. | Description: | 164 p. | URI: | http://hdl.handle.net/10356/46615 | Schools: | School of Electrical and Electronic Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Research Reports (Staff & Graduate Students) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| EEE_RESEARCH_REPORTS_34.pdf Restricted Access | 16.68 MB | Adobe PDF | View/Open |
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