Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/46615
Title: Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applications
Authors: Zhu, Wei Guang.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 1995
Abstract: Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access memory (DRAM) applications.
Description: 164 p.
URI: http://hdl.handle.net/10356/46615
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Research Reports (Staff & Graduate Students)

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