Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/46615
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dc.contributor.authorZhu, Wei Guang.en_US
dc.date.accessioned2011-12-21T03:07:26Z-
dc.date.available2011-12-21T03:07:26Z-
dc.date.copyright1995en_US
dc.date.issued1995-
dc.identifier.urihttp://hdl.handle.net/10356/46615-
dc.description164 p.en_US
dc.description.abstractFerroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access memory (DRAM) applications.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleFerroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition technology for high density semiconductor non-volatile memory and DRAM applicationsen_US
dc.typeResearch Reporten_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.reportnumberRP 24/93en_US
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Appears in Collections:EEE Research Reports (Staff & Graduate Students)
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