Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/4671
Title: Design, modelling and characterisation of submicron MOSFETs
Authors: Lim, Khee Yong.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2001
Abstract: A novel approach to formulating unified compact threshold voltage and drain current models for deep-submicron MOSFETs are present, which is based on a combined anlaytical derivation, (2-D) numerical simulation, and experimental correlation.
URI: http://hdl.handle.net/10356/4671
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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