Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/46750
Title: Fabrication and charaterization of InP-based high election mobility transistors
Authors: Liu, Yuwei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2009
Source: Liu, Y. (2009). Fabrication and charaterization of InP-Based high election mobility transistors. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: InP-based high electron mobility transistor (HEMT) is an important device in high frequency and low noise applications. In current work, studies on InP-based InGaAs single channel HEMT and InGaAs/InP composite channel HEMT were carried out. Some important issues such as the thermal stability of InGaAs/InP composite channel HEMT, surface passivation effect on InGaAs/InP composite channel HEMT, high-frequency noise of InP HEMT, and suppress of thermal noise in InGaAs/InP composite channel HEMT were investigated. They are summarized as following:
Description: 143 p.
URI: https://hdl.handle.net/10356/46750
DOI: 10.32657/10356/46750
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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