dc.contributor.authorLiu, Yuweien_US
dc.date.accessioned2011-12-23T07:43:30Z
dc.date.accessioned2017-07-23T08:33:40Z
dc.date.available2011-12-23T07:43:30Z
dc.date.available2017-07-23T08:33:40Z
dc.date.copyright2009
dc.date.issued2009
dc.identifier.citationLiu, Y. (2009). Fabrication and charaterization of InP-Based high election mobility transistors. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/46750
dc.description143 p.en_US
dc.description.abstractInP-based high electron mobility transistor (HEMT) is an important device in high frequency and low noise applications. In current work, studies on InP-based InGaAs single channel HEMT and InGaAs/InP composite channel HEMT were carried out. Some important issues such as the thermal stability of InGaAs/InP composite channel HEMT, surface passivation effect on InGaAs/InP composite channel HEMT, high-frequency noise of InP HEMT, and suppress of thermal noise in InGaAs/InP composite channel HEMT were investigated. They are summarized as following:en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleFabrication and charaterization of InP-based high election mobility transistorsen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorWang Hongen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US
dc.identifier.doihttps://doi.org/10.32657/10356/46750


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