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|Title:||Fabrication and charaterization of InP-based high election mobility transistors||Authors:||Liu, Yuwei||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Semiconductors||Issue Date:||2009||Source:||Liu, Y. (2009). Fabrication and charaterization of InP-Based high election mobility transistors. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||InP-based high electron mobility transistor (HEMT) is an important device in high frequency and low noise applications. In current work, studies on InP-based InGaAs single channel HEMT and InGaAs/InP composite channel HEMT were carried out. Some important issues such as the thermal stability of InGaAs/InP composite channel HEMT, surface passivation effect on InGaAs/InP composite channel HEMT, high-frequency noise of InP HEMT, and suppress of thermal noise in InGaAs/InP composite channel HEMT were investigated. They are summarized as following:||Description:||143 p.||URI:||https://hdl.handle.net/10356/46750||DOI:||10.32657/10356/46750||Rights:||Nanyang Technological University||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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